N型氮化镓的结构和光电导特性

修回日期: 2000-10-23

刊出日期: 2001-06-28

The Structure and Photoconductivity of N-Type GaN

Revised Date: 23 October 2000

Publish Date: 28 June 2001

摘要: 采用透射电镜高分辨反射电子衍射，扫描电镜形貌观察，X射线衍射等不同方法测试了不同Mg含量的N型氮化镓薄膜的结构。几种测定方法的比较表明，高分辨反射电子衍射是确定厚衬底的薄膜结构的快速而简便的方法，材料的杂质和缺陷是影响其光电导性质的重要因素。
- 透射电镜 /
- 高分辨反射电子衍射 /
- 扫描电镜 /
- X射线衍射 /
- 结构 /
- 光电导特性 /
- N型氮化镓 /
- 半导体材料
Abstract: The structural properties of Mg doped GaN films with different Mg concentrations deposited by MOCVD have been measured by TEM with high resolution reflective electron diffraction, SEM and X ray diffraction. The obtained results show that the high resol
- transmission /
- electron /
- microscope /
- (TEM) /
- high /
- resolution /
- reflective